FDS6675BZ Fairchild Semiconductor, FDS6675BZ Datasheet - Page 5

• Manufacturer Part Number: FDS6675BZ
• Description: MOSFET Power -30V P-Channel PwrTrch MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6675BZ

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 34 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev.B2
Typical Characteristics
10
10
10
10
10
10
10
0.5
10
1
2
-1
-2
-3
-4
1
10
10
4
3
2
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
Figure 14.
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
T
A
θ
JA
= 25
= 125
10
10
o
C
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
o
C/W
SINGLE PULSE
R
θ
JA
Junction-to-Ambient Transient Thermal Response Curve
= 125
T
J
= 25°C unless otherwise noted
10
o
10
C/W
-2
-2
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
10
DM
10
x Z
θJA
P
DM
1
/t
x R
2
θJA
V
t
1
+ T
GS
10
t
10
2
A
= -10 V
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2
2
10
10
3
3