FDS6675BZ Fairchild Semiconductor, FDS6675BZ Datasheet - Page 4

• Manufacturer Part Number: FDS6675BZ
• Description: MOSFET Power -30V P-Channel PwrTrch MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6675BZ

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 34 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev.B2
Typical Characteristics
Figure 11.
1000
1E-3
1E-4
0.01
100
12
10
0.1
10
Figure 7.
8
6
4
2
0
10
1
25
8
6
4
2
0
0
0
Maximum Continuous Drain Current vs
5
T
Ambient Temperature
50
A
Figure 9.
, AMBIENT TEMPERATURE
10
Gate Charge Characteristics
10
T
V
J
Q
GS
= 150
V
g
DD
, GATE CHARGE(nC)
= -4.5V
75
T
= -10V
20
o
J
15
-V
C
= 25
I
GS
g
(V)
vs V
o
C
V
20
100
GS
V
30
DD
T
GS
= -10V
J
= -20V
= 25°C unless otherwise noted
25
(
125
o
C
40
V
)
DD
30
= -15V
150
35
50
4
Figure 8.
Figure 12.
0.01
Figure 10.
100
1000
0.1
4000
10
100
10
20
1
0.01
1
10
0.1
-2
Capacitance vs Drain to Source Voltage
THIS AREA IS
LIMITED BY r
f = 1MHz
V
SINGLE PULSE
T
R
T
GS
J
A
θ
JA
= MAX RATED
= 25
Forward Bias Safe Operating Area
= 0V
V
= 125
-V
Unclamped Inductive Switching
DS
0.1
DS
o
10
t
, DRAIN to SOURCE VOLTAGE (V)
C
AV
, DRAIN TO SOURCE VOLTAGE (V)
-1
o
, TIME IN AVALANCHE(ms)
C/W
DS(on)
Capability
T
J
= 125
1
1
10
o
0
C
C
C
rss
iss
C
10
oss
T
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10
J
= 25
1
10
100 ms
10 s
DC
10 ms
1 s
o
100 us
1 ms
C
100
10
200
30
2