FDS6675BZ Fairchild Semiconductor, FDS6675BZ Datasheet

MOSFET Power -30V P-Channel PwrTrch MOSFET

FDS6675BZ

Manufacturer Part Number
FDS6675BZ
Description
MOSFET Power -30V P-Channel PwrTrch MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS6675BZ

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
34 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev. B2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDS6675BZ
P-Channel PowerTrench
-30V, -11A, 13mΩ
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJC
Symbol
, T
Device Marking
STG
FDS6675BZ
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Operating and Storage Temperature
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
D
D
SO-8
D
D
-Pulsed
FDS6675BZ
Device
S
S
S
G
Parameter
T
A
= 25°C unless otherwise noted
®
Reel Size
MOSFET
13’’
1
Features
6
5
7
8
Max r
Max r
Extended V
HBM ESD protection level of 5.4 KV typical (note 3)
High performance trench technology for extremely low
r
High power and current handing capability
RoHS Compliant
DS(on)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
DS(on)
DS(on)
GS
= 13mΩ at V
= 21.8mΩ at V
range (-25V) for battery applications
Tape Width
12mm
GS
4
3
1
2
GS
= -10V, I
-55 to 150
Ratings
= -4.5V, I
±25
-30
-55
-11
2.5
1.2
1.0
50
25
D
March 2009
= -11A
D
www.fairchildsemi.com
2500 units
Quantity
= -9A
Units
°C/W
°C/W
°C
W
V
V
A
tm

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FDS6675BZ Summary of contents

Page 1

... R Thermal Resistance , Junction to Case (Note 1) θJC Package Marking and Ordering Information Device Marking Device FDS6675BZ FDS6675BZ ©2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. B2 ® MOSFET Features Max r DS(on) Max r DS(on) Extended V HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low ...

Page 2

... Scale letter size paper 2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. 25°C unless otherwise noted J Test Conditions I = -250µ ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 60 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 150 2.0 2.5 3.0 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. 25°C unless otherwise noted J 4.0 µ s 3.5 3 2.5 2.0 1 3. Figure 2. Normalized 50 ...

Page 4

... GS Figure -4. 100 T , AMBIENT TEMPERATURE A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. 25°C unless otherwise noted J 4000 V = -15V DD 1000 V = -20V DD 100 0.1 Figure Figure 10. GS 100 10 = -10V GS 1 0.1 0.01 125 150 0.01 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0 0.1 0.05 0. 0.01 SINGLE PULSE - θ Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. 25°C unless otherwise noted PULSE WIDTH (sec 125 C RECTANGULAR PULSE DURATION (sec - ...

Page 6

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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