FDMS7656AS Fairchild Semiconductor, FDMS7656AS Datasheet - Page 4

• Manufacturer Part Number: FDMS7656AS
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7656AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 133nC @ 10V
• Input Capacitance (ciss) @ Vds: 8705pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 m Ohms
• Forward Transconductance Gfs (max / Min): 161 ns
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 49 A
• Power Dissipation: 96 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7656AS Rev.C
Typical Characteristics
0.01
100
0.1
10
10
50
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
I
Figure 9.
THIS AREA IS
LIMITED BY r
D
Figure 11. Forward Bias Safe
= 30 A
Switching Capability
V
0.1
20
DS
Gate Charge Characteristics
0.1
SINGLE PULSE
T
R
T
t
J
C
, DRAIN to SOURCE VOLTAGE (V)
AV
θ
Operating Area
JA
Unclamped Inductive
= MAX RATED
= 25
DS(on)
, TIME IN AVALANCHE (ms)
Q
= 125
g
, GATE CHARGE (nC)
o
C
40
V
T
1
o
DD
J
C/W
= 125
1
= 10 V
T
J
o
T
C
= 25
60
V
10
J
DD
= 25 °C unless otherwise noted
o
= 15 V
C
10
T
J
= 100
100
V
80
DD
100 ms
1 ms
10 ms
1 s
10 s
DC
o
= 20 V
C
100
1000
100
200
4
10000
1000
1000
100
200
150
100
0.5
100
10
50
1
10
0
0.1
Figure 10.
25
-3
Figure 12.
f = 1 MHz
V
SINGLE PULSE
R
T
GS
Figure 8.
C
θ
Limited by Package
Current vs Case Temperature
JA
= 25
= 0 V
10
= 125
V
-2
50
o
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
Power Dissipation
T
Maximum Continuous Drain
to Source Voltage
o
t, PULSE WIDTH (sec)
C/W
C
,
10
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
-1
75
1
V
1
GS
R
θ
= 4.5 V
JC
100
= 1.3
10
o
C/W
V
o
GS
C )
125
V
= 10 V
10
100
GS
www.fairchildsemi.com
C
C
C
= 10 V
oss
iss
rss
1000
30
150