FDMS7656AS Fairchild Semiconductor, FDMS7656AS Datasheet - Page 3

• Manufacturer Part Number: FDMS7656AS
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7656AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 133nC @ 10V
• Input Capacitance (ciss) @ Vds: 8705pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 m Ohms
• Forward Transconductance Gfs (max / Min): 161 ns
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 49 A
• Power Dissipation: 96 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7656AS Rev.C
Typical Characteristics
180
150
120
180
150
120
Figure 3. Normalized On Resistance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 1.
0
0
Figure 5. Transfer Characteristics
-75
0.0
1
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
vs Junction Temperature
= 30 A
-50
= 5 V
= 10 V
T
V
V
On Region Characteristics
-25
J
GS
DS
,
0.5
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
V
T
GS
GS
GS
GS
J
2
0
= 125
= 10 V
= 4.5 V
= 4 V
= 3.5 V
25
µ
o
C
s
1.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
50
J
= 25 °C unless otherwise noted
75
3
T
T
J
J
1.5
= -55
o
100 125 150
= 25
C )
V
GS
o
o
C
C
= 3 V
µ
s
2.0
4
3
0.001
0.01
200
100
0.1
10
6
4
2
0
6
5
4
3
2
1
0
1
0.0
Figure 2.
Figure 4.
0
2
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
= 125
= 0 V
V
SD
30
0.2
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
o
GS
On-Resistance vs Gate to
C
I
D
4
Source Voltage
,
,
Source to Drain Diode
V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
GS
D
60
V
= 30 A
GS
= 3 V
0.4
T
= 4.5 V
J
T
= -55
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
90
= 25
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
T
o
C
J
T
o
= 125
J
0.6
C
V
= 25
GS
120
= 3.5 V
o
o
C
C
8
0.8
V
www.fairchildsemi.com
V
150
GS
GS
= 10 V
= 4 V
µ
s
µ
s
180
1.0
10