FDMS7656AS Fairchild Semiconductor, FDMS7656AS Datasheet - Page 3
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FDMS7656AS
Manufacturer Part Number
FDMS7656AS
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDMS7656AS.pdf
(8 pages)
Specifications of FDMS7656AS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
133nC @ 10V
Input Capacitance (ciss) @ Vds
8705pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 m Ohms
Forward Transconductance Gfs (max / Min)
161 ns
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
49 A
Power Dissipation
96 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7656AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMS7656AS Rev.C
Typical Characteristics
180
150
120
180
150
120
Figure 3. Normalized On Resistance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 1.
0
0
Figure 5. Transfer Characteristics
-75
0.0
1
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
vs Junction Temperature
= 30 A
-50
= 5 V
= 10 V
T
V
V
On Region Characteristics
-25
J
GS
DS
,
0.5
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
V
T
GS
GS
GS
GS
J
2
0
= 125
= 10 V
= 4.5 V
= 4 V
= 3.5 V
25
µ
o
C
s
1.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
50
J
= 25 °C unless otherwise noted
75
3
T
T
J
J
1.5
= -55
o
100 125 150
= 25
C )
V
GS
o
o
C
C
= 3 V
µ
s
2.0
4
3
0.001
0.01
200
100
0.1
10
6
4
2
0
6
5
4
3
2
1
0
1
0.0
Figure 2.
Figure 4.
0
2
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
= 125
= 0 V
V
SD
30
0.2
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
o
GS
On-Resistance vs Gate to
C
I
D
4
Source Voltage
,
,
Source to Drain Diode
V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
GS
D
60
V
= 30 A
GS
= 3 V
0.4
T
= 4.5 V
J
T
= -55
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
90
= 25
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
T
o
C
J
T
o
= 125
J
0.6
C
V
= 25
GS
120
= 3.5 V
o
o
C
C
8
0.8
V
www.fairchildsemi.com
V
150
GS
GS
= 10 V
= 4 V
µ
s
µ
s
180
1.0
10