FDS2672_F085 Fairchild Semiconductor, FDS2672_F085 Datasheet - Page 5

• Manufacturer Part Number: FDS2672_F085
• Description: MOSFET N-CH 200V 3.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2672_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2535pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS2672_F085 Rev. A
Typical Characteristics
1E-3
1E-4
0.01
0.1
1
2
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
10
-3
Figure 13. Transient Thermal Response Curve
T
J
= 25°C unless otherwise noted
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
5
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
1
J
= P
DM
x Z
θJA
P
1
DM
/t
x R
2
10
θJA
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2
t
+ T
1
t
2
A
10
3