FDS2672_F085 Fairchild Semiconductor, FDS2672_F085 Datasheet - Page 2

• Manufacturer Part Number: FDS2672_F085
• Description: MOSFET N-CH 200V 3.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2672_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2535pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS2672_F085 Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
iss
oss
rss
g
SD
∆T
∆T
g(TOT)
gs
gd
rr
the drain pins. R
Symbol
DSS
Scale 1:1 on letter size paper
θJA
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
θJC
C, L = 3mH, I
is guaranteed by design while R
AS
(Note 2)
= 5A, V
Parameter
a)
62.5°C/W steady state
when mounted on a 1in
pad of 2 oz copper
DD
50°C/W
= 100V, V
T
θCA
J
(10
GS
= 25°C unless otherwise noted
is determined by the user’s board design.
= 10V
sec)
2
V
f = 1MHz
f = 1MHz
I
I
V
V
V
V
I
V
V
V
V
V
V
V
D
D
D
V
I
I
DS
F
F
DS
DS
GS
GS
GS
GS
GS
DS
DD
GS
DD
GS
= 250µA, V
= 250µA, referenced to 25°C
= 250µA, referenced to 25°C
= 3.9A, di/dt = 100A/µs
= 3.9A, di/dt = 100A/µs
= 160V, V
= 160V, V
= 100V, V
= ±20V
= 10V,I
= V
= 10V, I
= 6V, I
= 10V, I
= 100V, I
= 10V, R
=100V I
= 0V, I
2
DS
Test Conditions
, I
D
D
S
D
D
D
= 3.5A
D
GS
= 3.9A
= 3.9A
D
GEN
= 3.9A
= 3.9A, T
GS
GS
GS
= 3.9A
= 250µA
= 3.9A
= 0V
=0V
=0V T
= 0V,
= 6Ω
J
J
= 55°C
= 125°C
b) 125°C/W when mounted on a
minimum pad .
200
Min
2
1905
0.75
206
179
100
Typ
124
0.7
2.9
-11
22
10
35
10
33
11
67
30
59
63
15
7
www.fairchildsemi.com
±100
2535
Max
101
269
135
148
1.2
10
35
20
56
20
46
45
70
80
1
4
mV/°C
mV/°C
Units
µA
µA
nA
mΩ
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
V
Ω
V
V
S