FDS2672_F085 Fairchild Semiconductor, FDS2672_F085 Datasheet

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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS2672 FDS2672_F085 ©2010 Fairchild Semiconductor Corporation FDS2672_F085 Rev. A ® MOSFET General Description = 3.9A This single N-Channel MOSFET is produced using D Fairchild Semiconductor’s advanced UItraFET Trench = 3.5A process that has been especially tailored to minimize ...

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... Scale 1:1 on letter size paper 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. ° 3: Starting 3mH 5A 100V FDS2672_F085 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° ...

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... JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 30 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 10V 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDS2672_F085 Rev 25°C unless otherwise noted J 3 10V GS 2 4.5V GS 1.0 0 Figure 2. Normalized 180 160 140 120 100 ...

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... PACKAGE SINGLE PULSE -2 10 OPERATION IN THIS MAX RATED AREA MAY LIMITED BY r DS(on 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDS2672_F085 Rev 25°C unless otherwise noted J 10000 1000 V = 100V DD = 150V DD 100 10 0 Figure 8. 4.0 3.5 3.0 2 2.0 1.5 1 ...

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... SINGLE PULSE 1E Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design FDS2672_F085 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( ...

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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS2672_F085 Rev. A ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...