FDS2672_F085 Fairchild Semiconductor, FDS2672_F085 Datasheet - Page 4

• Manufacturer Part Number: FDS2672_F085
• Description: MOSFET N-CH 200V 3.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2672_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2535pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS2672_F085 Rev. A
Typical Characteristics
Figure 11.
10
10
10
10
10
10
0.1
Figure 9.
10
10
-1
-2
-3
0.01
1
2
1
0
8
6
4
2
0
0.01
Figure 7.
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
DS
Forward Bias Safe Operating Area
0.1
0.1
Unclamped Inductive Switching
LIMITED BY
PACKAGE
, DRAIN-SOURCE VOLTAGE (V)
8
Gate Charge Characteristics
t
AV
T
DS(on)
J
Q
, TIME IN AVALANCHE(ms)
= 125
g
, GATE CHARGE(nC)
Capability
16
o
1
1
V
C
DD
SINGLE PULSE
T J = MAX RATED
T A = 25
= 50V
T
J
O
= 25
10
C
V
10
24
DD
T
o
J
C
= 150V
= 25°C unless otherwise noted
V
DD
100
100
32
= 100V
1s
100us
1ms
10ms
100ms
DC
1000
1000
40
4
Figure 8.
Figure 10.
10000
3000
1000
1000
100
Figure 12. Single
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
1
10
25
0.1
-4
R
Capacitance vs Drain to Source Voltage
θ
SINGLE PULSE
JA
Ambient Continuous Drain Current vs
10
= 50
T
V
V
-3
A
DS
GS
50
, AMBIENT TEMPERATURE
Case Temperature
o
, DRAIN TO SOURCE VOLTAGE (V)
C/W
= 10V
10
t, PULSE WIDTH (s)
Dissipation
-2
1
Pulse Maximum Power
75
10
V
GS
-1
= 6V
T
FOR TEMPERATURES
ABOVE 25
A
I = I
= 25
10
100
25
0
o
C
10
o
www.fairchildsemi.com
C DERATE PEAK
150 T
----------------------- -
10
V
C
C
C
GS
oss
iss
(
rss
125
1
o
–
C
= 10V
125
)
A
f = 1MHz
V
10
GS
2
= 0V
10
150
100
3