FDMC7672S Fairchild Semiconductor, FDMC7672S Datasheet - Page 6
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FDMC7672S
Manufacturer Part Number
FDMC7672S
Description
MOSFET N-CH 30V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDMC7672S.pdf
(8 pages)
Specifications of FDMC7672S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 14.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14.8A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
2520pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMC7672S
Manufacturer:
FSC
Quantity:
3 000
Company:
Part Number:
FDMC7672S
Manufacturer:
TOKO
Quantity:
4 000
Part Number:
FDMC7672S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 13 shows the reverses recovery
characteristic of the FDMC7672S.
recovery characteristic
Figure 13. SyncFET body diode reverse
20
15
10
-5
5
0
0
40
80
TIME (ns)
didt = 300 A/ s
120
(continued)
160
200
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
0
Figure 14. SyncFET body diode reverses
leakage versus drain-source voltage
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
o
C
C
C
20
25
www.fairchildsemi.com
30