FDMC7672S Fairchild Semiconductor, FDMC7672S Datasheet - Page 4

• Manufacturer Part Number: FDMC7672S
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMC7672S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 14.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2520pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
Typical Characteristics
40
10
10
1
2000
1000
8
6
4
2
0
Figure 7.
0.01
100
0
0.5
10
10
1
I
D
Figure 9.
= 14.8 A
-4
4
Switching Capability
Gate Charge Characteristics
0.1
t
AV
8
Unclamped Inductive
, TIME IN AVALANCHE (ms)
T
V
Q
J
DD
g
= 125
, GATE CHARGE (nC)
12
10
= 15 V
-3
o
T
C
J
16
= 25
Figure 11. Single Pulse Maximum Power Dissipation
1
V
V
DD
o
T
DD
C
J
20
= 20 V
= 10 V
T
= 25 °C unless otherwise noted
J
= 100
10
10
24
-2
o
C
28
t, PULSE WIDTH (sec)
100
32
10
-1
4
5000
1000
0.01
100
100
0.1
10
1
10
1
0.01
0.1
Figure 8.
f = 1 MHz
V
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 10.
GS
J
A
JA
= MAX RATED
= 25
= 0 V
= 125
V
V
DS
o
DS
C
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
0.1
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
o
C/W
10
Capacitance vs Drain
DS(on)
Forward Bias Safe
1
1
100
V
SINGLE PULSE
R
T
GS
A
JA
= 25
= 10V
= 125
10
o
C
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10
o
C/W
C
C
C
iss
oss
rss
1ms
10 ms
100 ms
100 us
1 s
10 s
DC
1000
100
30