FDMC7672S Fairchild Semiconductor, FDMC7672S Datasheet - Page 3

no-image

FDMC7672S

Manufacturer Part Number
FDMC7672S
Description
MOSFET N-CH 30V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMC7672S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 14.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14.8A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
2520pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7672S
Manufacturer:
FSC
Quantity:
3 000
Part Number:
FDMC7672S
Manufacturer:
TOKO
Quantity:
4 000
Part Number:
FDMC7672S
Manufacturer:
FAIRCHILD
Quantity:
2 044
Part Number:
FDMC7672S
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDMC7672S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
Company:
Part Number:
FDMC7672S
Quantity:
910
Company:
Part Number:
FDMC7672S
Quantity:
24 000
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
45
36
27
18
45
36
27
18
Figure 3. Normalized On- Resistance
9
0
9
0
Figure 1.
0
-75
1
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
GS
I
V
DS
D
-50
GS
= 10 V
= 14.8 A
vs Junction Temperature
= 5 V
= 10 V
V
V
T
-25
GS
0.2
DS
On-Region Characteristics
J
,
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
T
DRAIN TO SOURCE VOLTAGE (V)
J
= 125
2
0
V
V
V
V
o
GS
GS
GS
GS
C
25
0.4
= 3.5 V
= 6 V
= 4.5 V
= 4 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
50
T
V
J
GS
= 25 °C unless otherwise noted
T
J
75
= 3 V
3
= -55
0.6
T
J
100 125 150
o
= 25
o
C )
C
o
C
0.8
4
3
0.001
0.01
100
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
15
12
1
9
6
3
0.0
Figure 2.
Figure 4.
0
Forward Voltage vs Source Current
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= 0 V
V
T
0.2
SD
= 3 V
J
, BODY DIODE FORWARD VOLTAGE (V)
V
= 125
9
Normalized On-Resistance
GS
On-Resistance vs Gate to
Source Voltage
,
4
Source to Drain Diode
GATE TO SOURCE VOLTAGE (V)
I
D
o
V
I
C
0.4
D
= 14.8 A
GS
,
DRAIN CURRENT (A)
T
= 4.5 V
18
J
= -55
T
J
0.6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 25
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
o
C
T
T
V
J
J
GS
= 125
= 25
o
27
C
= 6 V
0.8
o
V
V
C
o
GS
GS
C
= 3.5 V
= 4 V
8
www.fairchildsemi.com
36
V
1.0
GS
= 10 V
1.2
45
10

Related parts for FDMC7672S