QRE1113 Fairchild Semiconductor, QRE1113 Datasheet - Page 5

• Manufacturer Part Number: QRE1113
• Description: SENSOR REFL 5MM PHOTOTRANS THRU
• Manufacturer: Fairchild Semiconductor

Specifications of QRE1113

• Sensing Distance: 0.197" (5mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 30V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Through Hole
• Package / Case: 4-SMD
• Operating Temperature: -40°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
Typical Performance Curves
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
1.0
-40
T
Fig.
A
Fig. 6 Forward Current vs. Forward Voltage
= 25˚C
8
-20
Forward Voltage vs. Ambient Temperature
1.1
T
A
- AMBIENT TEMPERATURE (˚C)
V
F
0
- FORWARD VOLTAGE (V)
1.2
20
1.3
40
I
I
I
F
F
F
= 50 mA
= 20 mA
= 10 mA
(Continued)
1.4
60
80
1.5
5
100
10
1
0.1
Fig. 7 Rise and Fall Time vs. Load Resistance
1.0
0.9
0.8
0.7
t
t
t
t
V
t
T=1ms
T
f
r
f
r
pw
A
0.6
CC
= 25˚C
= 100 us
I
I
= 10 V
C
C
= 0.3 mA
= 1 mA
0.4
Fig. 8 Radiation Diagram
R
ANGULAR DISPLACEMENT
L
- LOAD RESIST
0.2
1
0
ANCE (KΩ)
0.2
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0.4
0.6
10