QRE1113 Fairchild Semiconductor, QRE1113 Datasheet

SENSOR REFL 5MM PHOTOTRANS THRU

QRE1113

Manufacturer Part Number
QRE1113
Description
SENSOR REFL 5MM PHOTOTRANS THRU
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QRE1113

Sensing Distance
0.197" (5mm)
Sensing Method
Reflective
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
20mA
Current - Dc Forward (if)
50mA
Output Type
Phototransistor
Response Time
20µs, 20µs
Mounting Type
Through Hole
Package / Case
4-SMD
Operating Temperature
-40°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
QRE1113, QRE1113GR
Minature Reflective Object Sensor
Features
QRE1113GR Package Dimensions
0.61 Nom.
Phototransistor output
No contact surface sensing
Miniature package
Lead form style: Gull Wing
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
1.80
(4x)
1.70
1.50
0.40
2.90
2.50
4
1
4.80
4.40
C L
C L
1.00
30°
3
2
0.60
0.40
1.10
0.90
0.94
0.94
Two leadform options: Through hole (QRE1113)
Two packaging options: Tube (QRE1113)
3.60
3.20
SMT gullwing (QRE1113GR)
Tape and reel (QRE1113GR)
September 2009
www.fairchildsemi.com

Related parts for QRE1113

QRE1113 Summary of contents

Page 1

... Nom. (4x) 4.80 4.40 Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15mm on all non-nominal dimensions ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 Two leadform options: Through hole (QRE1113) Two packaging options: Tube (QRE1113) 0.60 0.40 1. 3.60 3. ...

Page 2

... 4.20 3.80 0.40 1.70 1.50 0~20° Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15mm on all non-nominal dimensions Schematic ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 0.60 0.40 1.00 3 0.94 3.60 3.20 0.94 2 10.4 8.4 0~20° Pin 1: Anode ...

Page 3

... Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. Pulse conditions 100µ 10ms. 6. Measured using an aluminum alloy mirror 1mm reflective surface at close proximity. ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6 25°C unless otherwise specified) A (2,3,4) (2,3) ...

Page 4

... A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 COLLECTOR EMITTER VOLTAGE (V) CE Fig. 3 Normalized Collector Current vs. Collector to Emitter Voltage ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 1 25˚ 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 ...

Page 5

... Fig. 6 Forward Current vs. Forward Voltage 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 - AMBIENT TEMPERATURE (˚C) A Fig. 8 Forward Voltage vs. Ambient Temperature ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 (Continued) 100 10 1 1.3 1.4 1.5 0.1 Fig. 7 Rise and Fall Time vs. Load Resistance 1.0 0 0.8 ...

Page 6

... Recommended Solder Screen Pattern for GR option (for reference only) Dimensions in mm Taping Dimensions for GR option Progressive Direction 2.0±0.05 1.75 General tolerance ±0.1 Dimensions in mm ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 1.1 LED (+) 1.0 2.8 4.0 ø1.5 5.5±0.05 3.73 8 ...

Page 7

... Reflow Profile 1°C to 5°C/sec Note: Reflow soldering should not be done more than twice. ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 260°C max. for 10 sec. max. 1°C to 5°C/sec Pre-heating 180°C to 200°C 60 sec. max. above 220°C 120 sec ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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