QRE1113 Fairchild Semiconductor, QRE1113 Datasheet - Page 3

SENSOR REFL 5MM PHOTOTRANS THRU

QRE1113

Manufacturer Part Number
QRE1113
Description
SENSOR REFL 5MM PHOTOTRANS THRU
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QRE1113

Sensing Distance
0.197" (5mm)
Sensing Method
Reflective
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
20mA
Current - Dc Forward (if)
50mA
Output Type
Phototransistor
Response Time
20µs, 20µs
Mounting Type
Through Hole
Package / Case
4-SMD
Operating Temperature
-40°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical/Optical Characteristics
Notes:
1. Derate power dissipation linearly 1.00mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100µs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No reflective surface at close proximity.
EMITTER
SENSOR
INPUT DIODE
OUTPUT TRANSISTOR
COUPLED
Symbol
V
CE (SAT)
I
C(ON)
λ
I
V
I
I
CX
PE
t
t
R
D
Symbol
r
f
F
T
T
T
V
V
T
SOL-F
SOL-I
I
OPR
V
P
P
STG
CEO
ECO
I
FP
I
C
F
R
D
D
Parameter
Forward Voltage
Reverse Leakage Current
Peak Emission Wavelength
Collector-Emitter Dark Current
On-State Collector Current
Cross-Talk Collector Current
Saturation Voltage
Rise Time
Fall Time
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Continuous Forward Current
Reverse Voltage
Peak Forward Current
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
(T
(1)
(1)
A
= 25°C unless otherwise specified)
(5)
I
V
I
I
I
I
V
R
(T
F
F
F
F
F
R
CC
L
A
= 20mA
= 20mA
= 0mA, V
= 20mA, V
= 20mA, V
= 1k Ω
= 5V
= 25°C unless otherwise specified)
Test Conditions
(2,3,4)
= 5V, I
(2,3)
C(ON)
3
CE
CE
CE
= 20V
= 5V
= 5V
= 100µA,
(6)
(7)
260 for 10 sec
240 for 5 sec
Min.
0.10
-40 to +85
-40 to +90
Rating
75
50
50
30
20
5
1
5
Typ.
0.40
940
1.2
20
20
Max.
100
1.6
0.3
10
1
Units
mW
mW
www.fairchildsemi.com
mA
mA
°C
°C
°C
°C
V
A
V
V
Units
mA
nm
µA
nA
µA
µs
V
V

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