FSAM75SM60A Fairchild Semiconductor, FSAM75SM60A Datasheet - Page 6

IC SMART PWR MODULE SPM32-CA

FSAM75SM60A

Manufacturer Part Number
FSAM75SM60A
Description
IC SMART PWR MODULE SPM32-CA
Manufacturer
Fairchild Semiconductor
Series
SPM™r
Type
IGBTr
Datasheet

Specifications of FSAM75SM60A

Configuration
3 Phase
Current
75A
Voltage
600V
Voltage - Isolation
2500Vrms
Package / Case
SPM32CA
Collector-emitter Saturation Voltage
2.4 V
Gate-emitter Leakage Current
189 W
Power Dissipation
189 W
Mounting Style
SMD/SMT
Operating Temperature (max)
125C
Operating Temperature (min)
-20C
Pin Count
32
Mounting
Through Hole
Case Length
60mm
Case Height
7.2mm
Screening Level
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSAM75SM60A
Manufacturer:
FSC
Quantity:
120
©2006 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Thermal Resistance
Note
2. For the measurement point of case temperature(T
3. The thickness of thermal grease should not be more than 100um.
Package Marking and Ordering Information
Electrical Characteristics
Inverter Part
Note
4. t
Junction to Case Thermal
Resistance
Contact Thermal
Resistance
Collector - emitter
Saturation Voltage
FWDi Forward Voltage
Switching Times
Collector - emitter
Leakage Current
Device Marking
FSAM75SM60A
internally. For the detailed information, please see Fig. 4.
ON
and t
OFF
Item
Item
include the propagation delay time of the internal drive IC. t
(T
J
= 25°C, Unless Otherwise Specified)
FSAM75SM60A
Device
V
Symbol
t
t
CE(SAT)
C(OFF)
C(ON)
t
I
V
t
CES
OFF
ON
t
FM
Symbol
rr
R
R
R
th(j-c)Q
th(j-c)F
th(c-f)
V
V
V
V
I
V
(High-Low Side)
(Note 4)
V
C
CC
IN
IN
PN
IN
CE
C
= 75A, T
), please refer to Fig. 2.
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
= 0V
= 5V
= 5V ↔ 0V, Inductive Load
= 300V, V
= V
= V
SPM32-DA
CES
BS
Package
= 15V
J
, T
= 25°C
CC
J
= 25°C
= V
C(ON)
Condition
BS
and t
Condition
= 15V
C(OFF)
Real Size
I
I
C
C
are the switching time of IGBT itself under the given gate driving condition
= 50A, T
= 50A, T
-
J
J
= 25°C
= 25°C
Tape Width
Min.
-
-
-
-
-
-
-
-
-
Min. Typ.
-
-
-
Typ.
0.76
0.44
1.42
0.46
0.10
-
-
-
-
-
-
Max.
Quantity
0.56
0.98
0.06
Max.
250
2.4
2.1
-
-
-
-
-
8
°C/W
°C/W
°C/W
Unit
Unit
μ A
May 4, 2006
μ s
μ s
μ s
μ s
μ s
V
V

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