FDC3535 Fairchild Semiconductor, FDC3535 Datasheet - Page 5

• Manufacturer Part Number: FDC3535
• Description: MOSFET P-CH 80V 6-SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC3535

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 880pF @ 40V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 147 mOhms
• Gate Charge Qg: 14 nC
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.1 A
• Power Dissipation: 1.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC3535TR

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
= 25 °C unless otherwise noted
10
-2
SINGLE PULSE
R
θ
JA
= 175
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
θJA
t
1
+ T
t
2
A
www.fairchildsemi.com
1000