FDME510PZT Fairchild Semiconductor, FDME510PZT Datasheet - Page 6

• Manufacturer Part Number: FDME510PZT
• Description: MOSFET P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME510PZT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1490pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5 A
• Power Dissipation: 1.4 W
• Forward Transconductance Gfs (max / Min): 21 S
• Gate Charge Qg: 16 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDME510PZTTR

Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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FDME510PZT Rev.C1