FDME510PZT Fairchild Semiconductor, FDME510PZT Datasheet - Page 3

• Manufacturer Part Number: FDME510PZT
• Description: MOSFET P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME510PZT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1490pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5 A
• Power Dissipation: 1.4 W
• Forward Transconductance Gfs (max / Min): 21 S
• Gate Charge Qg: 16 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDME510PZTTR

©2010 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1
Typical Characteristics
15
10
15
10
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
0.5
5
0
5
0
Figure 1.
0
-75
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
-50
I
D
GS
= -4.5 V
vs Junction Temperature
V
= -6 A
DS
= -4.5 V
-V
-V
= -5 V
-25
T
GS
DS
On Region Characteristics
J
,
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
T
DRAIN TO SOURCE VOLTAGE (V)
0.5
1.0
J
= 150
0
V
V
o
25
GS
C
GS
T
µ
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
V
= -1.5 V
= - 1.8 V
= -55
GS
50
T
= -2.5 V
V
J
T
o
GS
J
C
= 25 °C unless otherwise noted
1.0
1.5
= 25
75
= -3 V
o
C
100 125 150
o
C )
µ
s
1.5
2.0
3
0.1
200
150
100
20
10
50
1
0.2
3
2
1
0
0
Figure 2.
Figure 4.
1.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
-V
V
= 0 V
1.5
SD
GS
0.4
, BODY DIODE FORWARD VOLTAGE (V)
T
= -1.5 V
-V
Normalized On-Resistance
J
On-Resistance vs Gate to
GS
= 150
-I
Source Voltage
Source to Drain Diode
D
2.0
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
5
C
0.6
V
2.5
T
GS
V
J
GS
= -55
µ
T
T
= -1.8 V
s
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
= -3 V
= 125
= 25
T
3.0
0.8
o
J
C
= 25
o
o
C
C
10
I
D
o
3.5
= -6 A
C
V
V
GS
GS
1.0
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= -4.5 V
= -2.5 V
4.0
µ
s
1.2
4.5
15