FDME510PZT Fairchild Semiconductor, FDME510PZT Datasheet - Page 5

• Manufacturer Part Number: FDME510PZT
• Description: MOSFET P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME510PZT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1490pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5 A
• Power Dissipation: 1.4 W
• Forward Transconductance Gfs (max / Min): 21 S
• Gate Charge Qg: 16 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDME510PZTTR

©2010 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1
Typical Characteristics
0.001
0.01
0.1
1
2
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
θ
JA
T
J
= 175
= 25 °C unless otherwise noted
o
10
C/W
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
10
x Z
P
θJA
DM
1
/t
x R
2
θJA
t
1
+ T
t
2
A
100
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1000