MC68HC908GP32CP Freescale Semiconductor, MC68HC908GP32CP Datasheet - Page 169
MC68HC908GP32CP
Manufacturer Part Number
MC68HC908GP32CP
Description
IC MCU 8MHZ 32K FLASH 40-DIP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68HC908GP32CFB.pdf
(410 pages)
Specifications of MC68HC908GP32CP
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
33
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
40-DIP (0.600", 15.24mm)
For Use With
M68EVB908GP32 - BOARD EVALUATION FOR HC908GP32
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
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Manufacturer
Quantity
Price
Company:
Part Number:
MC68HC908GP32CP
Manufacturer:
ROCKWELL
Quantity:
201
Part Number:
MC68HC908GP32CP
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
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11.5 FLASH Page Erase Operation
MC68HC908GP32
MOTOROLA
•
MC68HC08GP32
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Use this step-by-step procedure to erase a page (128 bytes) of FLASH
memory to read as logic 1:
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
Setting this read/write bit configures the 32Kbyte FLASH array for
mass erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
register.
range desired.
—
Rev. 6
FLASH Memory
nvs
Erase
nvh
(min. 10µs)
(min. 5µs)
(min. 1ms)
FLASH Page Erase Operation
FLASH Memory
Technical Data
167
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