SAK-TC1767-256F80HL AD Infineon Technologies, SAK-TC1767-256F80HL AD Datasheet - Page 31

• Manufacturer Part Number: SAK-TC1767-256F80HL AD
• Description: IC MCU 32BIT FLASH 176-LQFP
• Manufacturer: Infineon Technologies
• Series: TC17xxr

Specifications of SAK-TC1767-256F80HL AD

• Core Processor: TriCore
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: ASC, CAN, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number Of I /o: 88
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 4x10b, 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 176-LFQFP
• Data Bus Width: 32 bit
• Data Ram Size: 92 KB
• Interface Type: SPI
• Maximum Clock Frequency: 80 MHz
• Number Of Programmable I/os: 88
• Number Of Timers: 2
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (12 bit, 16 Channel)
• Packages: PG-LQFP-176
• Max Clock Frequency: 80.0 MHz
• Sram (incl. Cache): 128.0 KByte
• Can Nodes: 2
• A / D Input Lines (incl. Fadc): 36
• Program Memory: 2.0 MB
• For Use With: B158-H8539-G2-X-7600IN - KIT STARTER TC176X SERIES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: SP000442086

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Data Flash Features and Functions
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2.3.7
The data overlay functionality provides the capability to redirect data accesses by the
TriCore to program memory (segments 8
memory called “overlay memory”.
Depending on the device the following overlay memories can be available:
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This functionality makes it possible, for example, to modify the application’s test and
calibration parameters (which are typically stored in the program memory) during run
time of a program.
As the address translation is implemented in the DMI, it affects only data accesses
(reads and writes) of the TriCore. Instruction fetches by the TriCore or accesses by any
other master (including the debug interface) are not redirected.
1) Only available in Emulation Device “ED”.
2) Only available in Emulation Device with EBU.
Data Sheet
For further operating conditions see data sheet section “Flash Memory Parameters”.
64 Kbyte on-chip Flash, configured in two independent Flash banks of equal size.
64 bit read interface.
Erase/program one bank while data read access from the other bank.
Programming one bank while erasing the other bank using an automatic
suspend/resume function.
Dynamic correction of single-bit errors during read access.
Sector architecture:
– Two sectors of equal size.
– Each sector separately erasable.
128 byte pages to be written in one step.
Operational control per command sequences (unlock sequences, same as those of
Program Flash) for protection against unintended operation.
End-of-busy as well as error reporting with interrupt and bus error trap.
Write state machine for automatic program and erase.
Margin check for detection of problematic Flash bits.
Endurance = 30000 (can be device dependent); i.e. 30000 program/erase cycles per
sector are allowed, with a retention of min. 5 years.
Dedicated DFlash status information.
Other characteristics: Same as Program Flash.
Overlay SRAM in the PMU.
Emulation Memory
External memory
Data Access Overlay
2)
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1)
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H
27
and A
H
) called “target memory” to a different
Introduction
V1.3, 2009-09
TC1767