DF2378RVFQ34WV Renesas Electronics America, DF2378RVFQ34WV Datasheet - Page 256

MCU 3V 512K I-TEMP PB-FREE 144-L

DF2378RVFQ34WV

Manufacturer Part Number
DF2378RVFQ34WV
Description
MCU 3V 512K I-TEMP PB-FREE 144-L
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378RVFQ34WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Section 6 Bus Controller (BSC)
6.5.5
The read strobe (RD) timing can be changed for individual areas by setting bits RDN7 to RDN0 to
1 in RDNCR. Figure 6.19 shows an example of the timing when the read strobe timing is changed
in basic bus 3-state access space.
When the DMAC or EXDMAC is used in single address mode, note that if the RD timing is
changed by setting RDNn to 1, the RD timing will change relative to the rise of DACK or
EDACK.
Rev.7.00 Mar. 18, 2009 page 188 of 1136
REJ09B0109-0700
Read
Write
Notes: 1. Downward arrows indicate the timing of WAIT pin sampling.
Read Strobe (RD) Timing
2. When RDN = 0
φ
WAIT
Address bus
AS
RD
Data bus
HWR, LWR
Data bus
Figure 6.18 Example of Wait State Insertion Timing
T
1
By program wait
T
2
T
w
Write data
T
By WAIT pin
w
T
w
Read data
T
3

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