D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 262

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.7.10
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (T
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 6.48 shows the write access timing when the CAS latency
control cycle is disabled.
Rev. 3.00 Mar 17, 2006 page 210 of 926
REJ09B0283-0300
Figure 6.48 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
DQMU, DQML
Precharge-sel
Address bus
Bus Cycle Control in Write Cycle
SDRAM
Data bus
CKE
RAS
CAS
WE
Column address
PALL
T
p
Row address
Row address
(SDWCD = 1)
ACTV
T
r
High
NOP
T
c1
Column address
T
WRIT
c2
c1
) that is

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