DF2370VFQ34V Renesas Electronics America, DF2370VFQ34V Datasheet - Page 937
![IC H8S/2370 MCU FLASH 144-LQFP](/photos/12/41/124170/df2370vfq34v_sml.jpg)
DF2370VFQ34V
Manufacturer Part Number
DF2370VFQ34V
Description
IC H8S/2370 MCU FLASH 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2370VFQ34V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2370VFQ34V
Manufacturer:
Exar
Quantity:
67
Company:
Part Number:
DF2370VFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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2. Download of on-chip program
3. Initialization of programming/erasing
4. Programming/erasing execution
5. When programming/erasing is executed consecutively
The on-chip program is automatically downloaded by setting the SCO bit in the flash key
register (FKEY) and the flash control register (FCCS) of the programming/erasing interface
register.
The flash memory is replaced to the embedded program storage area when downloading. Since
the flash memory cannot be read when programming/erasing, the procedure program, which is
working from download to completion of programming/erasing, must be executed in the space
other than the flash memory to be programmed/erased (for example, on-chip RAM).
Since the result of download is returned to the programming/erasing interface parameter,
whether the normal download is executed or not can be confirmed.
The operating frequency is set before execution of programming/erasing. This setting is
performed by using the programming/erasing interface parameter.
The program data/programming destination address is specified in 128-byte units when
programming.
The block to be erased is specified in erase-block units when erasing.
These specifications are set by using the programming/erasing interface parameter and the on-
chip program is initiated. The on-chip program is executed by using the JSR or BSR
instruction and performing the subroutine call of the specified address in the on-chip RAM.
The execution result is returned to the programming/erasing interface parameter.
The area to be programmed must be erased in advance when programming flash memory.
All interrupts are prohibited during programming and erasing. Interrupts must be masked
within the user system.
When the processing is not ended by the 128-byte programming or one-block erasure, the
program address/data and erase-block number must be updated and consecutive
programming/erasing is required.
Since the downloaded on-chip program is left in the on-chip RAM after the processing,
download and initialization are not required when the same processing is executed
consecutively.
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 869 of 1136
REJ09B0109-0700
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