DF2370VFQ34V Renesas Electronics America, DF2370VFQ34V Datasheet - Page 921
![IC H8S/2370 MCU FLASH 144-LQFP](/photos/12/41/124170/df2370vfq34v_sml.jpg)
DF2370VFQ34V
Manufacturer Part Number
DF2370VFQ34V
Description
IC H8S/2370 MCU FLASH 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2370VFQ34V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2370VFQ34V
Manufacturer:
Exar
Quantity:
67
Company:
Part Number:
DF2370VFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Notes: 1. Prewriting (setting erase block data to all 0) is not necessary.
2. The values of x, y, z, α, β, γ, ε, η, θ, and N are shown in section 26.1.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (W) units.
4. Set only one bit in EBR1 or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Increment
address
NG
NG
Figure 20.8 Erase/Erase-Verify Flowchart
Set block start address to verify address
H'FF dummy write to verify address
*5
Clear ESU bit in FLMCR1
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR1
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (α) μs
Wait (η) μs
Wait (x) μs
Wait (y) μs
Wait (z) μs
Wait (β) μs
Wait (ε) μs
Wait (θ) μs
Wait (γ) μs
blocks?
End of
n = 1
Start
OK
OK
OK
*1
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
*2
NG
*2
*2
*4
*2
Start of erase
*2
Halt erase
*2
*2
*2
*2
*3
Rev.7.00 Mar. 18, 2009 page 853 of 1136
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait (η) μs
Wait (θ) μs
n ≥ N?
OK
*2
REJ09B0109-0700
NG
*2
n ← n + 1
*2
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