M38513E4FP#U0 Renesas Electronics America, M38513E4FP#U0 Datasheet - Page 51

• Manufacturer Part Number: M38513E4FP#U0
• Description: IC 740 MCU ROM 16K 42SSOP
• Manufacturer: Renesas Electronics America
• Series: 740/38000r

Specifications of M38513E4FP#U0

• Core Processor: 740
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SIO, UART/USART
• Peripherals: PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: OTP
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 5x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 42-SSOP
• Package: 42SSOP
• Family Name: 740
• Maximum Speed: 8 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 34
• Interface Type: I2C-BUS
• On-chip Adc: 5-chx10-bit
• Number Of Timers: 4
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

3851 Group
FLASH MEMORY MODE
The M38517F8 (flash memory version) has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when V
when V
dard serial I/O modes.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Table 15 Summary of M38517F8 (flash memory version)
Notes 1: The power source voltage must be Vcc = 4.5–5.5 V at program and erase operation.
Rev.1.01
Power source voltage
V
Flash memory mode
Erase block division
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
PP
voltage (For Program/Erase)
2: The power source voltage can be Vcc = 3.0–3.6 V also at program and erase operation.
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be
PP
rewritten in only parallel I/O mode.
is 5 V and V
Oct 15, 2003
(Built-in 24 KB or more ROM)
CC
Item
User ROM area
Boot ROM area
is 3.0-5.5 V in the CPU rewrite and stan-
page 49 of 89
CC
is 5 V, and 2 power sources
Vcc = 2.7– 5.5 V (Note 1)
Vcc = 2.7–3.6 V (Note 2)
4.5-5.5 V
3 modes (Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode)
1 block (32 Kbytes)
1 block (4 Kbytes) (Note 3)
Byte program
Batch erasing
Program/Erase control by software command
6 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Summary
Table 15 lists the summary of the M38517F8 (flash memory ver-
sion).
The flash memory of the M38517F8 is divided into User ROM area
and Boot ROM area as shown in Figure 57.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
Specifications