DF36054GFPJ Renesas Electronics America, DF36054GFPJ Datasheet - Page 137

MCU 3/5V 32K J-TEMP POR&LVD 64-Q

DF36054GFPJ

Manufacturer Part Number
DF36054GFPJ
Description
MCU 3/5V 32K J-TEMP POR&LVD 64-Q
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of DF36054GFPJ

Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SSU
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
45
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F36054GFPJ
HD64F36054GFPJ
7.4.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 7.4 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. An
5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower two
6. If the read data is not erased successfully, set erase mode again, and repeat the erase/erase-
7.4.3
All interrupts, including the NMI interrupt, are disabled while flash memory is being programmed
or erased, or while the boot program is executing, for the following three reasons:
1. Interrupt during programming/erasing may cause a violation of the programming or erasing
2. If interrupt exception handling starts before the vector address is written or during
3. If an interrupt occurs during boot program execution, normal boot mode sequence cannot be
register (EBR1). To erase multiple blocks, each block must be erased in turn.
overflow cycle of approximately 19.8 ms is allowed.
bits are B'00. Verify data can be read in longwords from the address to which a dummy write
was performed.
verify sequence as before. The maximum number of repetitions of the erase/erase-verify
sequence is 100.
algorithm, with the result that normal operation cannot be assured.
programming/erasing, a correct vector cannot be fetched and the CPU malfunctions.
carried out.
Erase/Erase-Verify
Interrupt Handling when Programming/Erasing Flash Memory
Rev. 4.00 Mar. 15, 2006 Page 103 of 556
REJ09B0026-0400
Section 7 ROM

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