DF36054GFPJ Renesas Electronics America, DF36054GFPJ Datasheet - Page 123

• Manufacturer Part Number: DF36054GFPJ
• Description: MCU 3/5V 32K J-TEMP POR&LVD 64-Q
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300H Tinyr

Specifications of DF36054GFPJ

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SSU
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 45
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F36054GFPJ; HD64F36054GFPJ

The features of the 56-kbyte or 32-kbyte flash memories built into the flash memory (F-ZTAT)
version are summarized below.
7.1
Figure 7.1 shows the block configuration of flash memory. The thick lines indicate erasing units,
the narrow lines indicate programming units, and the values are addresses. The 56-kbyte flash
memory is divided into 1 kbyte 4 blocks, 28 kbytes 1 block, 16 kbytes 1 block, and 8 kbytes
Erasing is performed in these units. Programming is performed in 128-byte units starting from an
address with lower eight bits H'00 or H'80.
1 block. The 32-kbyte flash memory is divided into 1 kbyte 4 blocks and 28 kbytes 1 blocks.
Programming/erase methods
Reprogramming capability
On-board programming
Programmer mode
Automatic bit rate adjustment
Programming/erasing protection
Power-down mode
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 1 kbyte 4 blocks, 28 kbytes 1 block,
16 kbytes 1 block, and 8 kbytes 1 block for the H8/36057F and H8/36037F and 1 kbyte
flash memory, each block must be erased in turn.
The flash memory can be reprogrammed up to 1,000 times.
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
Sets software protection against flash memory programming/erasing.
Operation of the power supply circuit can be partly halted in subactive mode. As a result,
flash memory can be read with low power consumption.
4 blocks and 28 kbytes
Block Configuration
1 block for the H8/36054F and H8/36034F. To erase the entire
Section 7 ROM
Rev. 4.00 Mar. 15, 2006 Page 89 of 556
REJ09B0026-0400
Section 7 ROM