MC9S08DZ128CLF Freescale Semiconductor, MC9S08DZ128CLF Datasheet - Page 67
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MC9S08DZ128CLF
Manufacturer Part Number
MC9S08DZ128CLF
Description
MCU 8BIT 128K FLASH 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets
1.MC9S08DV96CLF.pdf
(458 pages)
2.MC9S08DV96CLF.pdf
(4 pages)
3.MC9S08DZ128CLF.pdf
(4 pages)
4.MC9S08DZ96MLL.pdf
(4 pages)
Specifications of MC9S08DZ128CLF
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Package
48LQFP
Family Name
HCS08
Maximum Speed
40 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
87
Interface Type
CAN/I2C/SPI/UART
On-chip Adc
24-chx12-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DZ128CLF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
- MC9S08DV96CLF PDF datasheet
- MC9S08DV96CLF PDF datasheet #2
- MC9S08DZ128CLF PDF datasheet #3
- MC9S08DZ96MLL PDF datasheet #4
- Current page: 67 of 458
- Download datasheet (5Mb)
4.6
MC9S08DZ128 Series devices include FLASH and EEPROM memory intended primarily for program
and data storage. In-circuit programming allows the operating program and data to be loaded into FLASH
and EEPROM, respectively, after final assembly of the application product. It is possible to program the
arrays through the single-wire background debug interface. Because no special voltages are needed for
erase and programming operations, in-application programming is also possible through other
software-controlled communication paths. For a more detailed discussion of in-circuit and in-application
programming, refer to the HCS08 Family Reference Manual, Volume I, Freescale Semiconductor
document order number HCS08RMv1.
4.6.1
Features of the FLASH and EEPROM memory include:
4.6.2
Before any program or erase command can be accepted, the FLASH and EEPROM clock divider register
(FCDIV) must be written to set the internal clock for the FLASH and EEPROM module to a frequency
(f
Register
reset initialization. The user must ensure that FACCERR is not set before writing to the FCDIV register.
One period of the resulting clock (1/f
pulses. An integer number of these timing pulses is used by the command processor to complete a program
or erase command.
Freescale Semiconductor
FCLK
•
•
•
•
•
•
•
•
•
•
) between 150 kHz and 200 kHz (see
Up to 128K of FLASH and up to 2K of EEPROM (see
FLASH sector size: 512 bytes
EEPROM sector size: selectable 4-byte or 8-byte sector mapping operation
Single power supply program and erase
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
Flexible block protection
Security feature for FLASH, EEPROM, and RAM
Burst programming capability
Sector erase abort
(FCDIV)”). This register can be written only once, so normally this write is performed during
FLASH and EEPROM
Features
Program and Erase Times
When changing from a low power mode (Stop2 mode or bus frequency less
than 150kHz) into an operating condition that allows program or erase, it is
necessary to wait at least 10μs before starting a program or erase command.
MC9S08DZ128 Series Data Sheet, Rev. 1
FCLK
) is used by the command processor to time program and erase
Section 4.6.11.1, “FLASH and EEPROM Clock Divider
NOTE
Table 1-1
for exact array sizes)
Chapter 4 Memory
67
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