C8051F521A-IM Silicon Laboratories Inc, C8051F521A-IM Datasheet - Page 31

IC 8051 MCU 8K FLASH 10DFN

C8051F521A-IM

Manufacturer Part Number
C8051F521A-IM
Description
IC 8051 MCU 8K FLASH 10DFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F52xr
Datasheets

Specifications of C8051F521A-IM

Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
10-DFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
6
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.25 V
Data Converters
A/D 6x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
C8051F5x
Core
8051
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
6
Number Of Timers
3
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F500DK
Minimum Operating Temperature
- 40 C
On-chip Adc
6-ch x 12-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1488 - KIT DEV C8051F53XA, C8051F52XA770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1455 - ADAPTER PROGRAM TOOLSTICK F520
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1490-5
Table 2.6. Comparator Electrical Characteristics
V
All specifications apply to both Comparator0 and Comparator1 unless otherwise noted.
Response Time:
Mode 0, Vcm
Response Time:
Mode 1, Vcm
Response Time:
Mode 2, Vcm
Response Time:
Mode 3, Vcm
Common-Mode Rejection
Ratio
Positive Hysteresis 1
Positive Hysteresis 2
Positive Hysteresis 3
Positive Hysteresis 4
Negative Hysteresis 1
Negative Hysteresis 2
Negative Hysteresis 3
Negative Hysteresis 4
Inverting or Non-Inverting
Input Voltage Range
Input Capacitance
Input Bias Current
Input Offset Voltage
Input Impedance
Power Supply
Power Supply Rejection
Power-up Time
Supply Current at DC
Notes:
REGIN
1. Vcm is the common-mode voltage on CP0+ and CP0–.
2. Guaranteed by design and/or characterization.
= 2.7–5.25 V, –40 to +125 °C unless otherwise noted. 
Parameter
1
1
1
1
= 1.5 V
= 1.5 V
= 1.5 V
= 1.5 V
2
2
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0HYP1-0 = 00
CP0HYP1-0 = 01
CP0HYP1-0 = 10
CP0HYP1-0 = 11
CP0HYN1-0 = 00
CP0HYN1-0 = 01
CP0HYN1-0 = 10
CP0HYN1-0 = 11
Mode 0
Mode 1
Mode 2
Mode 3
C8051F52x/F52xA/F53x/F53xA
Conditions
Rev. 1.3
–0.25
Min
–10
13
13
2
5
2
5
1310
1980
4770
1120
Typ
780
980
850
870
0.7
0.7
0.5
1.5
0.2
2.3
0.3
10
20
10
20
3
5
5
4
6
3
2
V
DD
Max
7.5
3.8
10
20
40
10
20
40
10
30
15
+ 0.25
9
2
2
4
Units
mV/V
mV/V
mV
mV
mV
mV
mV
mV
mV
mV
mV
k
pF
nA
µA
µA
µA
µA
ns
ns
ns
ns
ns
ns
ns
ns
µs
V
31

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