S9S08SG16E1MTJ Freescale Semiconductor, S9S08SG16E1MTJ Datasheet - Page 324

• Manufacturer Part Number: S9S08SG16E1MTJ
• Description: MCU 16K FLASH 20-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of S9S08SG16E1MTJ

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD. POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 20-TSSOP
• Processor Series: S08SG
• Core: HCS08
• Data Bus Width: 8 bit
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08SG32, DEMO9S08SG32AUTO, DEMO9S08SG8, DEMO9S08SG8AUTO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Appendix A Electrical Characteristics
A.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
324
1
2
3
Radiated emissions,
electric field
Data based on qualification test results.
IEC Level Maximums: N ≤ 12dBμV, L ≤ 24dBμV, I ≤ 36dBμV
SAE Level Maximums: 1 ≤ 10dBμV, 2 ≤ 20dBμV, 3 ≤ 30dBμV, 4 ≤ 40dBμV
Parameter
Radiated Emissions
V
Symbol
RE_TEM
Table A-17. Radiated Emissions, Electric Field
package type
Conditions
T
28 TSSOP
V
A
DD
= +25
= 5 V
MC9S08SG32 Data Sheet, Rev. 8
o
C
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
SAE Level
Frequency
IEC Level
2
3
4 MHz crystal
20 MHz bus
f
OSC
/f
BUS
Level
(Max)
12
12
–8
N
6
2
1
Freescale Semiconductor
dBμV
Unit
—
—
♦
♦
♦
♦
♦
♦
Rated
Temp
♦
♦
♦
♦
♦
♦