STM32F103C8T6TR STMicroelectronics, STM32F103C8T6TR Datasheet - Page 42

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STM32F103C8T6TR

Manufacturer Part Number
STM32F103C8T6TR
Description
MCU ARM 64KB FLASH MEM 48-LQFP
Manufacturer
STMicroelectronics
Series
STM32r

Specifications of STM32F103C8T6TR

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
37
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
For Use With
497-10048 - BOARD EVAL ACCELEROMETER497-10030 - STARTER KIT FOR STM32497-8511 - KIT STARTER FOR STM32 512K FLASH497-6438 - BOARD EVALUTION FOR STM32 512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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Electrical characteristics
5.3.11
42/67
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size is
either 3 parts (cumulative mode) or 3 parts × (n + 1) supply pins (non-cumulative mode).
The human body model (HBM) can be simulated. The tests are compliant with JESD22-
A114A standard.
For more details, refer to the application note AN1181.
Table 27.
1. TBD stands for to be determined.
2. Values based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 28.
V
V
Symbol
Symbol
ESD(CDM)
ESD(HBM)
LU
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
Static latch-up class
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
ESD absolute maximum ratings
Electrical sensitivities
Parameter
Ratings
T
A
+105 °C
(1)
Conditions
T
Conditions
A
+25 °C
Maximum value
2000
TBD
STM32F103xx
II level A
Class
(2)
Unit
V

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