DSPIC30F4011-20I/ML Microchip Technology, DSPIC30F4011-20I/ML Datasheet - Page 180

• Manufacturer Part Number: DSPIC30F4011-20I/ML
• Description: IC DSPIC MCU/DSP 48K 44QFN
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F4011-20I/ML

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 48KB (16K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFN
• Core Frequency: 40MHz
• Embedded Interface Type: CAN, I2C, SPI, UART
• No. Of I/o's: 30
• Flash Memory Size: 48KB
• Supply Voltage Range: 2.5V To 5.5V
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F401120/ML

dsPIC30F4011/4012
TABLE 24-10: ELECTRICAL CHARACTERISTICS: BOR
TABLE 24-11: DC CHARACTERISTICS: PROGRAM AND EEPROM
DS70135E-page 178
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
DC CHARACTERISTICS
BO10
BO15
Note 1:
Param
Param
No.
No.
2:
2:
3:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
EB
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
V
V
Symbol
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
‘11’ values not in usable operating range.
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP™ Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage on
V
High-to-Low
During Programming
During Programming
During Programming
DD
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
Transition
Characteristic
(2)
(2)
(2)
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature
100K
V
V
10K
Min
4.5
3.0
40
40
—
—
—
—
—
—
MIN
MIN
Confidential
Typ
100K
100
100
(3)
1M
10
10
10
—
—
—
—
2
2
4
(1)
4.58
Min
2.6
4.1
—
—
Max
5.5
5.5
5.5
5.5
—
—
—
30
—
—
—
—
30
30
Typ
-40°C ≤ T
-40°C ≤ T
-40°C ≤ T
-40°C ≤ T
—
—
—
—
Units
5
Year Provided no other specifications are
Year Provided no other specifications are
E/W -40°C ≤ T
E/W -40°C ≤ T
mA
mA
mA
ms
ms
ms
(1)
V
V
V
V
Using EECON to read/write,
V
violated
Row Erase
V
violated
Row Erase
Bulk Erase
Max
2.71
4.73
A
A
4.4
—
—
MIN
MIN
A
A
≤ +85°C for Industrial
≤ +125°C for Extended
≤ +85°C for Industrial
≤ +125°C for Extended
= Minimum operating voltage
= Minimum operating voltage
Units
© 2007 Microchip Technology Inc.
mV
A
A
V
V
V
V
≤ +85°C
≤ +85°C
Conditions
Not in operating range
Conditions