MC56F8013VFAE Freescale Semiconductor, MC56F8013VFAE Datasheet - Page 117

• Manufacturer Part Number: MC56F8013VFAE
• Description: IC DIGITAL SIGNAL CTLR 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: 56F8xxxr

Specifications of MC56F8013VFAE

• Core Processor: 56800
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 26
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Ram Size: 2K x 16
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 6x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 32-LQFP
• Product: DSCs
• Data Bus Width: 16 bit
• Processor Series: MC56F80xx
• Core: 56800E
• Numeric And Arithmetic Format: Fixed-Point
• Device Million Instructions Per Second: 32 MIPs
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 26
• Data Ram Size: 4 KB
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Data Rom Size: 16 KB
• Development Tools By Supplier: MC56F8037EVM, DEMO56F8014-EE, DEMO56F8013-EE
• Interface Type: SCI, SPI, I2C
• Minimum Operating Temperature: - 40 C
• For Use With: CPA56F8013 - BOARD SOCKET FOR MC56F8013APMOTOR56F8000E - KIT DEMO MOTOR CTRL SYSTEMDEMO56F8013-EE - BOARD DEMO FOR 56F8013
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

frequency.
B, the internal [state-dependent component], reflects the supply current required by certain on-chip
resources only when those resources are in use. These include RAM, Flash memory and the ADCs.
C, the internal [dynamic component], is classic C*V
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V
of the I/O cell types used on the 56800E reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change.
in the I/O cells as a function of capacitive load. In these cases:
where:
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found
to be fairly low when averaged over a period of time.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the
device. Sum the total of all V
for the purposes of these rough calculations. For instance, if there is a total of eight PWM outputs driving
10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored,
as it is assumed to be negligible.
Freescale Semiconductor
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•
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Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
TotalPower = Σ((Intercept + Slope*Cload)*frequency/10MHz)
Table 10-20 I/O Loading Coefficients at 10MHz
8mA drive
4mA drive
2
/R or IV to arrive at the resistive load contribution to power. Assume V = 0.5
56F8013/56F8011 Data Sheet, Rev. 12
Table 10-20
provides coefficients for calculating power dissipated
2
Intercept
1.15mW
*F CMOS power dissipation corresponding to the
1.3
0.11mW / pF
0.11mW / pF
Slope
2
*F, although simulations on two
Power Consumption
117