MC56F8002VWL Freescale Semiconductor, MC56F8002VWL Datasheet - Page 66

DSC 12K FLASH 32MHZ 28-SOIC

MC56F8002VWL

Manufacturer Part Number
MC56F8002VWL
Description
DSC 12K FLASH 32MHZ 28-SOIC
Manufacturer
Freescale Semiconductor
Series
56F8xxxr
Datasheet

Specifications of MC56F8002VWL

Core Processor
56800
Core Size
16-Bit
Speed
32MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
12KB (6K x 16)
Program Memory Type
FLASH
Ram Size
1K x 16
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 15x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
28-SOIC
Product
DSCs
Data Bus Width
16 bit
Processor Series
MC56F80xx
Core
56800E
Instruction Set Architecture
Dual Harvard
Device Million Instructions Per Second
32 MIPs
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
40
Data Ram Size
2 KB
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Development Tools By Supplier
MC56F8006DEMO, APMOTOR56F8000E
Interface Type
LIN, I2C, SCI, SPI
Minimum Operating Temperature
- 40 C
For Use With
APMOTOR56F8000E - KIT DEMO MOTOR CTRL SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Specifications
Power consumption is given by the following equation:
A, the internal [static] component, is comprised of the DC bias currents for the oscillator, leakage currents, PLL, and voltage
references. These sources operate independently of processor state or operating frequency.
B, the internal [state-dependent] component, reflects the supply current required by certain on-chip resources only when those
resources are in use. These include RAM, flash memory, and the ADCs.
C, the internal [dynamic] component, is classic C*V
standard cell logic.
D, the external [dynamic] component, reflects power dissipated on-chip as a result of capacitive loading on the external pins of
the chip. This is also commonly described as C*V
reveal that the power-versus-load curve does have a non-zero Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and frequency at which the
outputs change.
In these cases:
where:
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found to be fairly low when
averaged over a period of time.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the device. Sum the total of
all V
For instance, if there is a total of eight PWM outputs driving 10 mA into LEDs, then P = 8*0.5*0.01 = 40 mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored, as it is assumed to be
negligible.
66
2
/R or IV to arrive at the resistive load contribution to power. Assume V = 0.5 for the purposes of these rough calculations.
Summation is performed over all output pins with capacitive loads
Total power is expressed in mW
C
load
is expressed in pF
Table 38
TotalPower = ((Intercept + Slope*Cload)*frequency/10 MHz)
provides coefficients for calculating power dissipated in the I/O cells as a function of capacitive load.
MC56F8006/MC56F8002 Digital Signal Controller, Rev. 3
Total power =
Table 38. I/O Loading Coefficients at 10 MHz
8 mA drive
4 mA drive
2
*F, although simulations on two of the I/O cell types used on the 56800E
+C:
+D:
+B: internal [state-dependent component]
+E:
2
A:
*F CMOS power dissipation corresponding to the 56800E core and
external [dynamic component]
internal [dynamic component]
external [static component]
internal [static component]
Intercept
1.15 mW
1.3
0.11 mW/pF
0.11 mW/pF
Slope
Freescale Semiconductor
Eqn. 1
Eqn. 2

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