LPC1113FHN33/301,5 NXP Semiconductors, LPC1113FHN33/301,5 Datasheet - Page 43

• Manufacturer Part Number: LPC1113FHN33/301,5
• Description: IC MCU 32BIT 24KB FLASH 33HVQFN
• Manufacturer: NXP Semiconductors
• Series: LPC1100r

Specifications of LPC1113FHN33/301,5

• Program Memory Type: FLASH
• Program Memory Size: 24KB (24K x 8)
• Package / Case: 33-VQFN Exposed Pad, 33-HVQFN, 33-SQFN, 33-DHVQFN
• Core Processor: ARM Cortex-M0
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 28
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: LPC11
• Core: ARM Cortex M0
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, UART
• Number Of Programmable I/os: 28
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Cpu Family: LPC1100
• Device Core: ARM Cortex M0
• Device Core Size: 32b
• Frequency (max): 50MHz
• Total Internal Ram Size: 8KB
• # I/os (max): 42
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 33
• Package Type: HVQFN EP
• Package: 33HVQFN EP
• Family Name: LPC1100
• Maximum Speed: 50 MHz
• Number Of Timers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 622-1005 - USB IN-CIRCUIT PROG ARM7 LPC2K
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4951; 935290776551

NXP Semiconductors
10. Dynamic characteristics
LPC1111_12_13_14
Product data sheet
10.1 Flash memory
10.2 External clock
Table 11.
T
[1]
[2]
Table 12.
T
[1]
[2]
Symbol
N
t
t
t
Symbol
f
T
t
t
t
t
ret
er
prog
osc
CHCX
CLCX
CLCH
CHCL
amb
amb
Fig 19. External clock timing (with an amplitude of at least V
cy(clk)
endu
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 °C), nominal supply
voltages.
= −40 °C to +85 °C, unless otherwise specified.
= −40 °C to +85 °C; V
Flash characteristics
Dynamic characteristic: external clock
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
Parameter
endurance
retention time
erase time
programming
time
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 August 2010
DD
over specified ranges.
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
t
CHCL
Conditions
t
CLCX
[1]
32-bit ARM Cortex-M0 microcontroller
Min
1
40
T
T
-
-
cy(clk)
cy(clk)
[1]
[2]
T
cy(clk)
LPC1111/12/13/14
Min
10000
10
20
95
0.95
× 0.4
× 0.4
t
CLCH
t
CHCX
i(RMS)
Typ
-
-
-
100
1
Typ
-
-
-
-
-
-
= 200 mV)
[2]
002aaa907
© NXP B.V. 2010. All rights reserved.
Max
25
1000
-
-
5
5
Max
-
-
-
105
1.05
Unit
MHz
ns
ns
ns
ns
ns
43 of 60
Unit
cycles
years
years
ms
ms