ATMEGA169V-1MC Atmel, ATMEGA169V-1MC Datasheet - Page 282

• Manufacturer Part Number: ATMEGA169V-1MC
• Description: IC MCU AVR 16K 1.8V 1MHZ 64-QFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA169V-1MC

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 1MHz
• Connectivity: SPI, UART/USART, USI
• Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 64-MLF®, 64-QFN
• For Use With: ATAVRISP2 - PROGRAMMER AVR IN SYSTEMATAVRBFLY - KIT EVALUATION AVR BUTTERFLYATSTK502 - MOD EXPANSION AVR STARTER 500
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Data Polling EEPROM
Table 130. Serial Programming Instruction Set
282
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
ATmega169V/L
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
Byte 1
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value 0xFF. At the time the device is
ready for a new byte, the programmed value will read correctly. This is used to deter-
mine when the next byte can be written. This will not work for the value 0xFF, but the
user should have the following in mind: As a chip-erased device contains 0xFF in all
locations, programming of addresses that are meant to contain 0xFF, can be skipped.
This does not apply if the EEPROM is re-programmed without chip erasing the device.
In this case, data polling cannot be used for the value 0xFF, and the user will have to
wait at least t
t
Table 129. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Figure 128. Serial Programming Waveforms
WD_EEPROM
Symbol
t
t
t
t
WD_FUSE
WD_FLASH
WD_EEPROM
WD_ERASE
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
SERIAL DATA INPUT
0101 0011
100x xxxx
000a aaaa
000x xxxx
000a aaaa
000x xxaa
value.
Byte 2
SAMPLE
Instruction Format
(MOSI)
(MISO)
(SCK)
WD_EEPROM
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxbb bbbb
bbxx xxxx
bbbb bbbb
Byte 3
MSB
MSB
before programming the next byte. See Table 129 for
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
Byte4
Minimum Wait Delay
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page at
address a:b.
Read data o from EEPROM memory at
address a:b.
4.5 ms
4.5 ms
9.0 ms
9.0 ms
2514H–AVR–05/03
LSB
LSB