DSPIC30F3010-30I/SO Microchip Technology, DSPIC30F3010-30I/SO Datasheet - Page 65
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DSPIC30F3010-30I/SO
Manufacturer Part Number
DSPIC30F3010-30I/SO
Description
IC DSPIC MCU/DSP 24K 28SOIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F3010-30ISO.pdf
(228 pages)
2.DSPIC30F3010-30ISO.pdf
(18 pages)
3.DSPIC30F3010-30ISO.pdf
(6 pages)
4.DSPIC30F3010-30ISO.pdf
(16 pages)
5.DSPIC30F3010-30ISO.pdf
(22 pages)
6.DSPIC30F3014-30IP.pdf
(244 pages)
Specifications of DSPIC30F3010-30I/SO
Program Memory Type
FLASH
Program Memory Size
24KB (8K x 24)
Package / Case
28-SOIC (7.5mm Width)
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Eeprom Size
1K x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Product
DSCs
Data Bus Width
16 bit
Processor Series
DSPIC30F
Core
dsPIC
Maximum Clock Frequency
30 MHz
Data Ram Size
1 KB
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300027, DM330011, DM300018, DM183021
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DSPIC30F301030ISO
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F3010-30I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
7.0
The Data EEPROM Memory is readable and writable
during normal operation over the entire V
data EEPROM memory is directly mapped in the
program memory address space.
The four SFRs used to read and write the program
Flash memory are used to access data EEPROM
memory, as well. As described in Section 4.0, these
registers are:
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
The EEPROM data memory allows read and write of
single words and 16-word blocks. When interfacing to
data memory, NVMADR, in conjunction with the
NVMADRU register, is used to address the EEPROM
location being accessed. TBLRDL and TBLWTL instruc-
tions are used to read and write data EEPROM. The
dsPIC30F devices have up to 8 Kbytes (4K words) of
data EEPROM, with an address range from 0x7FF000
to 0x7FFFFE.
A word write operation should be preceded by an erase
of the corresponding memory location(s). The write
typically requires 2 ms to complete, but the write time
will vary with voltage and temperature.
A program or erase operation on the data EEPROM
does not stop the instruction flow. The user is respon-
sible for waiting for the appropriate duration of time
before initiating another data EEPROM write/erase
operation. Attempting to read the data EEPROM while
a programming or erase operation is in progress results
in unspecified data.
2004 Microchip Technology Inc.
Note: This data sheet summarizes features of this group
of dsPIC30F devices and is not intended to be a complete
reference source. For more information on the CPU,
peripherals, register descriptions and general device
functionality, refer to the dsPIC30F Family Reference
Manual (DS70046). For more information on the device
instruction set and programming, refer to the dsPIC30F
Programmer’s Reference Manual (DS70030).
DATA EEPROM MEMORY
DD
range. The
Preliminary
Control bit WR initiates write operations, similar to pro-
gram Flash writes. This bit cannot be cleared, only set,
in software. This bit is cleared in hardware at the com-
pletion of the write operation. The inability to clear the
WR bit in software prevents the accidental or
premature termination of a write operation.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set when a write operation is interrupted by a MCLR
Reset, or a WDT Time-out Reset, during normal oper-
ation. In these situations, following Reset, the user can
check the WRERR bit and rewrite the location. The
address register NVMADR remains unchanged.
7.1
A TBLRD instruction reads a word at the current pro-
gram word address. This example uses W0 as a
pointer to data EEPROM. The result is placed in
register W4, as shown in Example 7-1.
EXAMPLE 7-1:
MOV
MOV
MOV
TBLRDL [ W0 ], W4
Note:
Reading the Data EEPROM
W1
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
Interrupt flag bit NVMIF in the IFS0 regis-
ter is set when write is complete. It must be
cleared in software.
,
TBLPAG
DATA EEPROM READ
dsPIC30F
; Init Pointer
; read data EEPROM
DS70082G-page 63