DSPIC30F3010-30I/SO Microchip Technology, DSPIC30F3010-30I/SO Datasheet - Page 60
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DSPIC30F3010-30I/SO
Manufacturer Part Number
DSPIC30F3010-30I/SO
Description
IC DSPIC MCU/DSP 24K 28SOIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F3010-30ISO.pdf
(228 pages)
2.DSPIC30F3010-30ISO.pdf
(18 pages)
3.DSPIC30F3010-30ISO.pdf
(6 pages)
4.DSPIC30F3010-30ISO.pdf
(16 pages)
5.DSPIC30F3010-30ISO.pdf
(22 pages)
6.DSPIC30F3014-30IP.pdf
(244 pages)
Specifications of DSPIC30F3010-30I/SO
Program Memory Type
FLASH
Program Memory Size
24KB (8K x 24)
Package / Case
28-SOIC (7.5mm Width)
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Eeprom Size
1K x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Product
DSCs
Data Bus Width
16 bit
Processor Series
DSPIC30F
Core
dsPIC
Maximum Clock Frequency
30 MHz
Data Ram Size
1 KB
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300027, DM330011, DM300018, DM183021
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DSPIC30F301030ISO
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F3010-30I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
dsPIC30F
6.4
The dsPIC30F Flash program memory is organized
into rows and panels. Each row consists of 32 instruc-
tions, or 96 bytes. Each panel consists of 128 rows, or
4K x 24 instructions. RTSP allows the user to erase one
row (32 instructions) at a time and to program 32
instructions at one time. RTSP may be used to program
multiple program memory panels, but the table pointer
must be changed at each panel boundary.
Each panel of program memory contains write latches
that hold 32 instructions of programming data. Prior to
the actual programming operation, the write data must
be loaded into the panel write latches. The data to be
programmed into the panel is loaded in sequential
order into the write latches; instruction 0, instruction 1,
etc. The instruction words loaded must always be from
an even group of 32 address boundary.
The basic sequence for RTSP programming is to set up
a table pointer, then do a series of TBLWT instructions
to load the write latches. Programming is performed by
setting the special bits in the NVMCON register. 32
TBLWTL and 32 TBLWTH instructions are required to
load the 32 instructions.
All of the table write operations are single word writes
(2 instruction cycles), because only the table latches
are written. The actual programming operation is
started by a special sequence of writes to the NVM
control registers and takes nominally 2 msec.
The Flash Program Memory is readable, writable and
erasable during normal operation over the entire V
range.
6.5
The three SFRs used to read and write the program
Flash memory are:
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
6.5.1
The NVMCON register controls which blocks are to be
erased, which memory type is to be programmed, and
start of the programming cycle.
DS70082G-page 58
RTSP Operation
Control Registers
NVMCON REGISTER
Preliminary
DD
6.5.2
The NVMADR register is used to hold the lower two
bytes of the effective address. The NVMADR register
captures the EA<15:0> of the last table instruction that
has been executed and selects the row to write.
6.5.3
The NVMADRU register is used to hold the upper byte
of the effective address. The NVMADRU register cap-
tures the EA<23:16> of the last table instruction that
has been executed.
6.5.4
NVMKEY is a write-only register that is used for write
protection. To start a programming or an erase
sequence, the user must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to Section 6.6 for
further details.
6.6
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 2 msec in
duration and the processor stalls (waits) until the oper-
ation is finished. Setting the WR bit (NVMCON<15>)
starts the operation, and the WR bit is automatically
cleared when the operation is finished.
6.6.1
The user can erase one row of program Flash memory
at a time. The general process is:
1.
2.
3.
Read one row of program Flash (32 instruction
words) and store into data RAM as a data
“image”.
Update the data image with the desired new
data.
Erase program Flash row.
a)
b)
c)
d)
e)
f)
g)
Programming Operations
Setup NVMCON register for multi-word,
program Flash, erase, and set WREN bit.
Write address of row to be erased into
NVMADRU/NVMDR.
Write ‘55’ to NVMKEY.
Write ‘AA’ to NVMKEY.
Set the WR bit. This will begin erase cycle.
CPU will stall for the duration of the erase
cycle.
The WR bit is cleared when erase cycle
ends.
NVMADR REGISTER
NVMADRU REGISTER
NVMKEY REGISTER
PROGRAMMING ALGORITHM FOR
PROGRAM FLASH
2004 Microchip Technology Inc.