MT18HTF6472DY-40EB2 Micron Technology Inc, MT18HTF6472DY-40EB2 Datasheet - Page 2

• Manufacturer Part Number: MT18HTF6472DY-40EB2
• Description: MODULE SDRAM DDR2 512MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF6472DY-40EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 60ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.17A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2:
Table 3:
Table 4:
Table 5:
PDF: 09005aef80e935cd/Source: 09005aef80e934a6
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT18HTF12872(P)DY-80E__
MT18HTF12872(P)DY-800__
MT18HTF12872(P)DY-667__
MT18HTF12872(P)DY-53E__
MT18HTF12872(P)DY-40E__
MT18HTF25672(P)DY-80E__
MT18HTF25672(P)DY-800__
MT18HTF25672(P)DY-667__
MT18HTF25672(P)DY-53E__
MT18HTF25672(P)DY-40E__
MT18HTF6472(P)DY-667__
MT18HTF6472(P)DY-53E__
MT18HTF6472(P)DY-40E__
Part Number
Part Number
Part Number
Addressing
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H32M8
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8
Part Numbers and Timing Parameters – 2GB Modules
Notes appear below; base device: MT47H128M8
Notes:
2
2
2
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HTF12872(P)Y-667D2.
Module
Density
Module
Density
Module
Density
512MB
512MB
512MB
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
1GB
1GB
1GB
1GB
1GB
2GB
2GB
2GB
2GB
2GB
1
1
, 256Mb DDR2 SDRAM
, 512Mb DDR2 SDRAM
Configuration
Configuration
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
256Mb (32 Meg x 8)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
1K (A0–A9)
2
1
512MB
, 1Gb DDR2 SDRAM
1KB
8K
Bandwidth
Bandwidth
Bandwith
Module
Module
Module
4.3 GB/s
6.2 GB/s
6.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.2 GB/s
6.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
5.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
16K (A0–A13)
4 (BA0, BA1)
Memory Clock/
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
1K (A0–A9)
2 (S0#, S1#)
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
Data Rate
1GB
1KB
8K
©2003 Micron Technology, Inc. All rights reserved.
1Gb (128 Meg x 8)
8 (BA0, BA1, BA2)
16K (A0–A13)
(CL-
(CL-
(CL-
2 (S0#, S1#)
1K (A0–A9)
Latency
Latency
Latency
t
t
t
2GB
4-4-4
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
1KB
5-5-5
3-3-3
RCD-
RCD-
RCD-
8K
Features
t
t
t
RP)
RP)
RP)