MT18HTF6472DY-40EB2 Micron Technology Inc, MT18HTF6472DY-40EB2 Datasheet - Page 16

• Manufacturer Part Number: MT18HTF6472DY-40EB2
• Description: MODULE SDRAM DDR2 512MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF6472DY-40EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 60ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.17A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19:
PDF: 09005aef80e935cd/Source: 09005aef80e934a6
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
Byte
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
MIN row precharge time,
MIN row active-to-row active,
MIN RAS#-to-CAS# delay,
MIN active-to-precharge time,
Module rank density
Address and command setup time,
Address and command hold time,
Data/data mask input setup time,
Data/data mask input hold time,
Write recovery time,
WRITE-to-READ command delay,
READ-to-PRECHARGE command delay,
Memory analysis probe
Extension for bytes 41 and 42
MIN active-to-active/refresh time,
MIN AUTO REFRESH-to-ACTIVE/AUTO
REFRESH command period,
SDRAM device MAX cycle time,
SDRAM device MAX DQS–DQ skew time,
t
SDRAM device MAX read data hold skew
factor,
PLL relock time
DQSQ
Serial Presence-Detect Matrix (continued)
t
QHS
Description
t
WR
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
t
t
RCD
RP
t
RFC
t
t
RRD
RAS
t
CK (MAX)
t
t
DH
WTR
t
t
t
DS
RC
IH
t
IS
b
b
b
2
b
t
RTP
Entry (Version)
256MB, 512MB,
-80E/-667/-53E
-800/-667/-53E
16
-800/-667
-53E/-40E
-800/-667
-53E/-40E
-667/-53E
-80E/-800
-80E/-800
-80E/-800
-667/-53E
-80E/-800
-800/-40E
-800/-667
-53E/-40E
-80E/-800
-80E/-800
-80E-800
15µs
-80E
-80E
-40E
1GB
-667
-53E
-40E
-667
-53E
-40E
-40E
-667
-53E
-40E
-80E
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MB
–/1E/1E
– /2D
– /3C
– /3C
–/28
2D
2D
3C
3C
3C
3C
4B
1E
28
40
20
25
35
27
37
47
10
15
17
22
27
1E
00
00
00
37
80
18
1E
23
22
28
0F
–
–
–
–
–
–
–
–
–
–
1
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
1GB
2D
2D
2D
32
3C
3C
1E
32
3C
3C
28
80
17
20
25
35
25
27
37
47
05
10
15
12
17
22
27
3C
1E
28
1E
00
30
00
00
39
3C
37
69
80
14
18
1E
23
1E
22
28
0F
2GB
2D
2D
2D
32
3C
3C
1E
32
3C
3C
28
01
17
20
25
35
25
27
37
47
05
10
15
12
17
22
27
3C
1E
28
1E
00
36
06
06
39
3C
37
80
14
18
1E
23
1E
22
28
7F
0F