MT18HTF6472DY-40EB2 Micron Technology Inc, MT18HTF6472DY-40EB2 Datasheet - Page 15

• Manufacturer Part Number: MT18HTF6472DY-40EB2
• Description: MODULE SDRAM DDR2 512MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF6472DY-40EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 60ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.17A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19:
PDF: 09005aef80e935cd/Source: 09005aef80e934a6
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes used by Micron
Total number of bytes in SPD device
Fundamental memory type
Number of row addresses on SDRAM
Number of column addresses on SDRAM
DIMM height and module ranks
Module data width
Reserved
Module voltage interface levels
SDRAM cycle time,
(CL = MAX value, see byte 18)
SDRAM access from clock,
(CL = MAX value, see byte 18)
Module configuration type
Refresh rate/type
SDRAM device width (primary SDRAM)
Error-checking SDRAM data width
Reserved
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
Module thickness
DDR2 DIMM type
SDRAM module attributes
SDRAM device attributes: weak driver (01),
or weak driver and 50Ω ODT (03)
SDRAM cycle time,
SDRAM access from CK,
SDRAM cycle time,
SDRAM access from CK,
Serial Presence-Detect Matrix
Description
t
t
t
CK
CK, MAX CL - 1
CK, MAX CL - 2
t
t
AC, MAX CL - 1
AC, MAX CL - 2
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
t
AC
ECC and parity (P)
Registered DIMM
30mm, dual rank
Entry (Version)
-53E/-40E (4, 3)
-80E/-800/-667
DDR2 SDRAM
-800 (6, 5, 4)
-667 (5, 4, 3)
15
7.81µs/SELF
1 PLL, 2 reg
-80E (5, 4)
SSTL 1.8V
-80E/-800
-53E/-40E
-80E/-667
-53E/-40E
-80E/-800
-80E/-800
-53E/-40E
-80E/-800
-53E/-40E
13, 14
4 or 8
-80E
-800
-667
-53E
-40E
-667
-53E
-40E
-800
-667
-53E
-40E
-667
-667
ECC
128
256
4, 8
10
72
0
8
8
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MB
–/–/03
–/3D
0D
0A
3D
0C
80
08
08
61
48
00
05
30
50
45
50
60
02
06
82
08
08
00
04
38
18
01
01
05
01
50
45
50
60
50
00
45
00
–
–
–
–
–
–
–
–
–
1
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
00/3D
00/40
1GB
0A
3D
3D
80
08
08
0E
61
48
00
05
25
25
30
50
40
45
50
60
02
06
82
08
08
00
0C
04
30
70
38
18
01
01
05
03
01
30
50
40
45
50
60
50
00
45
00
00/3D
00/40
2GB
0A
3D
3D
80
08
08
0E
61
48
00
05
25
25
30
50
40
45
50
60
02
06
82
08
08
00
0C
08
30
70
38
18
01
01
05
03
01
30
50
40
45
50
60
50
00
45
00