MT16VDDF12864HG-40BF2 Micron Technology Inc, MT16VDDF12864HG-40BF2 Datasheet - Page 17

• Manufacturer Part Number: MT16VDDF12864HG-40BF2
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.6A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 18–20; 0°C
pdf: 09005aef80b57837, source: 09005aef80b577fa
DDAF16C64_128x64HG.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
17
T
A
SYMBOL
t
t
WPRES
t
t
t
t
t
t
WPRE
t
+70°C; V
WPST
t
t
t
t
XSNR
XSRD
t
t
RPRE
RPST
t
REFC
WTR
RCD
RRD
REFI
VTD
RAS
t
RFC
t
NA
WR
RC
RP
512MB, 1GB (x64, DR) PC3200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
= V
MIN
0.25
200
0.9
0.4
0.4
40
55
70
15
15
10
15
70
0
2
0
t
DD
QH -
200-PIN DDR SODIMM
Q = +2.6V ±0.1V
-40B
t
DQSQ
70,000
MAX
70.3
1.1
0.6
0.6
7.8
UNITS
t
t
t
t
t
t
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
©2004 Micron Technology, Inc.
NOTES
18, 19
31
43
38
38
17
22
21
21