MT16VDDF12864HG-40BF2 Micron Technology Inc, MT16VDDF12864HG-40BF2 Datasheet - Page 13

MODULE DDR SDRAM 1GB 200-SODIMM

MT16VDDF12864HG-40BF2

Manufacturer Part Number
MT16VDDF12864HG-40BF2
Description
MODULE DDR SDRAM 1GB 200-SODIMM
Manufacturer
Micron Technology Inc

Specifications of MT16VDDF12864HG-40BF2

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.6A
Number Of Elements
16
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 12; notes appear on pages 18–20; 0°C
pdf: 09005aef80b57837, source: 09005aef80b577fa
DDAF16C64_128x64HG.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT Any input
0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to VSS . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
V
IN
V
DD
, V
OUT
OUT
REF
DD
DD
REF
SS
SS
Q Supply
= V
Supply
= 0.373V, maximum V
and Inputs
pin 0V
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
V
Q - 0.373V, minimum V
OUT
V
IN
V
DD
1.35V
Q)
REF
, maximum V
Command/Address,
RAS#, CAS#, WE#
S#, CKE, CK, CK#
DM
DQ, DQS
REF
, minimum V
SYMBOL
V
V
T
T
V
REF
A
A
IH
IL
(AC)
(AC)
(AC)
+70°C
+70°C; V
TT
)
13
TT
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DD
SYMBOL
V
V
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
= V
V
0.49
V
IH
IH
REF
V
V
V
I
512MB, 1GB (x64, DR) PC3200
DD
I
I
OH
Relative to V
T
OZ
OL
REF
DD
(DC)
(DC)
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
DD
I
MIN
A
Q
+ 0.310
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
Q = +2.6V ±0.1V
V
DD
Q
V
V
REF
REF
0.49
V
-16.8
MIN
16.8
-0.3
2.5
2.5
-32
-16
-10
DD
-4
200-PIN DDR SODIMM
+ 0.15
- 0.04
SS
0.49
V
Q
REF
. . . . . . . . . . . . -0.5V to V
MAX
- 0.310
V
V
V
DD
V
REF
REF
DD
0.51
V
Q
MAX
2.7
2.7
DD
32
16
10
+ 0.04
4
- 0.15
+ 0.3
Q
UNITS
V
V
V
UNITS
mA
©2004 Micron Technology, Inc.
mA
µA
µA
V
V
V
V
V
V
DD
NOTES
25, 35
25, 35
NOTES
32, , 48
32, 36,
39, 48
33, 34
Q +0.5V
6, 39
7, 39
6
25
25
46
46

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