MT16VDDF12864HG-40BF2 Micron Technology Inc, MT16VDDF12864HG-40BF2 Datasheet

MODULE DDR SDRAM 1GB 200-SODIMM

MT16VDDF12864HG-40BF2

Manufacturer Part Number
MT16VDDF12864HG-40BF2
Description
MODULE DDR SDRAM 1GB 200-SODIMM
Manufacturer
Micron Technology Inc

Specifications of MT16VDDF12864HG-40BF2

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.6A
Number Of Elements
16
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DDR SDRAM SODIMM
MT16VDDF6464H – 512MB
MT16VDDF12864H – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, and PC3200
• 512MB (64 Meg x 64) and 1GB (128 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/received
• Differential clock inputs CK and CK#
• Multiple internal device banks for concurrent
• Dual rank
• Programmable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
200-Pin SODIMM Figures
Figure 1:
PDF: 09005aef80a77a90/Source: 09005aef80a646bc
DDF16C64_128x64_L_H.fm - Rev. G 8/08 EN
PCB height: 31.75mm (1.25in)
(SODIMM)
(-40B: V
2n-prefetch architecture; two data accesses per clock
cycle
with data—that is, source-synchronous data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
512MB 200-Pin SODIMM
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Q = +2.6V)
(MO-244)
www.micron.com
1
512MB, 1GB (x64, DR) 200-Pin DDR SODIMM
Figure 2:
Notes: 1. See Table 9 on page 10 , Table 10 on page 11,
Options
• Self refresh current
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Standard
– Low power
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
or Table 11 on page 12 for low power values.
1GB 200-Pin SODIMM
1
A
A
≤ +85°C)
≤ +70°C)
©2003 Micron Technology, Inc. All rights reserved.
2
(MO-244)
2
Marking
Features
None
None
-40B
-335
-265
G
L
Y
I

Related parts for MT16VDDF12864HG-40BF2

MT16VDDF12864HG-40BF2 Summary of contents

Page 1

DDR SDRAM SODIMM MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2100, PC2700, and PC3200 • 512MB (64 Meg ...

Page 2

... 400 333 266 – 333 266 – 266 200 t t RCD and RP for -335 modules show 18ns to align with industry specifications; 256Mb (32 Meg 256Mb DDR SDRAM Configuration Bandwidth 512MB 64 Meg x 64 512MB 64 Meg x 64 512MB 64 Meg x 64 512MB 64 Meg x 64 ...

Page 3

... MT16VDDF12864HG-40B__ MT16VDDF12864HY-40B__ MT16VDDF12864(L)HG-335__ MT16VDDF12864HI-335__ MT16VDDF12864H(I)Y-335__ MT16VDDF12864HG-265__ MT16VDDF12864HY-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. ...

Page 4

Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 5

Table 6: Pin Descriptions Symbol Type Description A0–A12 Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...

Page 6

Functional Block Diagrams Figure 3: Functional Block Diagram – 512MB S1# S0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS2 DM2 DM CS# DQS DQ16 DQ ...

Page 7

Figure 4: Functional Block Diagram – 1GB S1# S0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS2 DM2 DM CS# DQS DQ16 DQ DQ17 DQ DQ18 ...

Page 8

... DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 9: I Specifications and Conditions – 512MB (Die Revison K) DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet ...

Page 11

Table 10: I Specifications and Conditions – 512MB (All Other Die Revisions) DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating ...

Page 12

Table 11: I Specifications and Conditions – 1GB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

Module Dimensions Figure 5: 200-Pin SODIMM – 512MB 2.0 (0.079 (2X) 1.8 (0.071) (2X) U7 6.0 (0.236) TYP 2.44 (0.096) TYP 2.0 (0.079) TYP 0.99 (0.039) U9 Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN ...

Page 15

Figure 6: 200-Pin SODIMM – 1GB 2.0 (0.079) R (2X) 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.44 (0.096) TYP 2.0 (0.079) TYP 0.99 (0.039) U9 U13 Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) ...

Related keywords