MT48V8M32LFB5-8 IT TR Micron Technology Inc, MT48V8M32LFB5-8 IT TR Datasheet - Page 70

• Manufacturer Part Number: MT48V8M32LFB5-8 IT TR
• Description: IC SDRAM 256MBIT 125MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48V8M32LFB5-8 IT TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1107-2

Figure 48: Single Write – Without Auto Precharge
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
A0–A9, A11
COMMAND
BA0, BA1
DQM 0-3
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes: 1. For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
t CK
T1
NOP
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
4. PRECHARGE command not allowed else
DISABLE AUTO PRECHARGE
quency.
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
t CMS
t CL
COLUMN m 3
t DS
T2
WRITE
BANK
D
IN
t CH
t CMH
m
t DH
t WR 2
T3
NOP 4
70
IN
T4
NOP 4
m> and the PRECHARGE command, regardless of fre-
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANK
ALL BANKS
PRECHARGE
BANK
t
T5
1
RAS would be violated.
256Mb: x32 Mobile SDRAM
T6
t RP
NOP
©2003 Micron Technology, Inc. All rights reserved.
BANK
ROW
ACTIVE
T7
Timing Diagrams
T8
NOP
DON’T CARE