lrs1386 Sharp Microelectronics of the Americas, lrs1386 Datasheet - Page 29

• Manufacturer Part Number: lrs1386
• Description: Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

13. AC Electrical Characteristics for SRAM
13.1 AC Test Conditions
Note:
13.2 Read Cycle
Note:
Input pulse level
Input rise and fall time
Input and Output timing Ref. level
Output load
Symbol
1. Including scope and socket capacitance.
1. Active output to High-Z and High-Z to output active tests specified for a ±200mV transition from steady state levels into
t
t
t
t
t
ACE1
ACE2
t
t
t
t
t
t
t
t
t
OHZ
t
OLZ
BHZ
BLZ
HZ1
HZ2
LZ1
LZ2
RC
AA
OE
OH
BE
the test load.
Read Cycle Time
Address access time
Chip enable access time (S-CE
Chip enable access time (S-CE
Byte enable access time
Output enable to output valid
Output hold from address change
S-CE
S-CE
S-OE Low to output active
S-UB or S-LB Low to output active
S-CE
S-CE
S-OE High to output in High-Z
S-UB or S-LB High to output in High-Z
1
2
1
2
Low to output active
High to output active
High to output in High-Z
Low to output in High-Z
1
2
Parameter
)
)
L R S1 3 8 6
1TTL + C
0.4V to 2.2V
1.5 V
5ns
L
(30pF)
(T
(1)
A
= -25°C to +85°C, S-V
Notes
1
1
1
1
1
1
1
1
Min.
85
10
10
10
5
5
0
0
0
0
Max.
CC
85
85
85
85
40
25
25
25
25
= 2.7V to 3.3V)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
27