lrs1386 Sharp Microelectronics of the Americas, lrs1386 Datasheet - Page 24

• Manufacturer Part Number: lrs1386
• Description: Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

12.4 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance
Notes:
t
t
t
t
t
t
Symbol
WHQV1
t
WHOV1
t
WHQV2
t
WHQV3
t
WHRH1
t
WHRH2
t
1. Typical values measured at T
2. Excludes external system-level overhead.
3. Every 16 words data are loaded alternatively into 2 page buffers.
4. Sampled, but not 100% tested.
5. A latency time is required from writing suspend command (F-WE or F-CE going high) until SR.7 going "1"or F-RY/BY
6. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
t
EHQV1
EHOV1
EHQV2
EHQV3
EHRH1
EHRH2
t
t
WMB
ERES
WPB
change based on device characterization.
going High-Z.
t
ERES
/
/
/
/
/
/
4K-Word Parameter Block
Program Time
32K-Word Main Block
Program Time
Word Program Time
OTP Program Time
4K-Word Parameter Block
Erase Time
32K-Word Main Block
Erase Time
(Page Buffer) Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
and its sequence is repeated, the block erase operation may not be finished.
Parameter
A
=+25 C and nominal voltages. Assumes corresponding lock bits are not set. Subject to
Notes
2, 3
2, 3
2, 3
2
2
2
2
2
2
5
5
6
Page Buffer
Command
is Used or
Not Used
Not Used
Not Used
Not Used
not Used
L R S1 3 8 6
Used
Used
Used
-
-
-
-
-
Min.
500
F-V
(In System)
Typ.
PP
0.05
0.03
0.38
0.24
0.3
0.6
36
11
=V
7
5
5
(T
(1)
PPH1
A
= -25°C to +85°C, F-V
Max.
0.12
400
200
100
0.3
2.4
10
20
1
4
5
(4)
(2)
Min.
500
(In Manufacturing)
F-V
Typ.
PP
0.04
0.02
0.31
0.17
0.2
0.5
27
=V
9
5
5
5
(1)
CC
PPH2
= 2.7V to 3.3V)
Max.
0.12
0.06
185
185
0.5
90
10
20
1
4
5
(2)
Unit
s
s
s
s
s
s
s
s
s
s
s
s
22