s71gs256nc0bawak0 Meet Spansion Inc., s71gs256nc0bawak0 Datasheet - Page 177

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s71gs256nc0bawak0

Manufacturer Part Number
s71gs256nc0bawak0
Description
Stacked Multi-chip Product Mcp 256/128 Megabit 16/8m X 16-bit Cmos 3.0 Volt Vcc And 1.8 V Vio Mirrorbit Tm Uniform Sector Page-mode Flash Memory With 64/32 Megabit 4/2m X 16-bit 1.8v Psram
Manufacturer
Meet Spansion Inc.
Datasheet
A d v a n c e
I n f o r m a t i o n
CE#
OE#
WE#
ADDRESS
Address Valid
Data Valid
DATA
LB#/UB#
t RC = READ Cycle Time
Don't Care
Figure 66. READ Operation
CE#
OE#
WE#
ADDRESS
Address Valid
Data Valid
DATA
LB#/UB#
t WC = WRITE Cycle Time
Don't Care
Figure 67. WRITE Operation
Page Mode READ Operation
Page mode is a performance-enhancing extension to the legacy asynchronous
READ operation. In page mode-capable products, an initial asynchronous read
access is performed, then adjacent addresses can be quickly read by simply
changing the low-order address. Addresses A[3: 0] are used to determine the
members of the 16-address CellularRAM page. Addresses A[4] and higher must
remain fixed during the entire page mode access.
Figure 68
shows the timing di-
agram for a page mode access.
CellularRAM-2A
177
December 15, 2004 cellRAM_02_A0

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